A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET(Semiconductor Materials and Devices)

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概要

• 論文の詳細を見る

• A test structure to separately measure sheet resistances of highly-doped-drain (HDD) and lightly-doped-drain (LDD) in LDD-type CMOSFETs with various gate spaces S having sub-100nm sidewalls was proposed. From the reciprocal of source/drain-resistance R^<-1> versus S characteristics, the sheet resistance ρ_H of the high-conductive-region (HCR) corresponding to HDD and the approximate width W_<LC> of the low-conductive-region (LCR) corresponding to LDD could be estimated. Both of ρ_H and W_<LC> for p- and n-MOS devices were scarcely dependent on the gate voltage. The sidewall-width difference of 40nm could be sufficiently detected by using the test structure with the S pitch of about 60nm. The R^<-1> versus S characteristics showed the unstable resistance variations in the narrow S region less than 0.3μm, which corresponded to the minimum S for the process used for the test device fabrication and suggested that various micro-loading effects seriously affected on the characteristics.

• 社団法人電子情報通信学会の論文
• 2006-09-01

著者

• MATSUDA Toshihiro

  Department of Information Systems Engineering, Toyama Prefectural University

• IWATA Hideyuki

  Department of Information Systems Engineering, Toyama Prefectural University

• KOMOKU Kiyotaka

  Department of Communication Engineering, Okayama Prefectural University

• MORISHITA Takayuki

  Department of Communication Engineering, Okayama Prefectural University

• OHZONE Takashi

  Dawn Enterprise Co., LTD.

• Matsuda T

  Department Of Information Systems Engineering Toyama Prefectural University

• OHZONE Takashi

  Department of Communication Engineering, Okayama Prefectural University

• OKADA Kazuhiko

  Department of Communication Engineering, Okayama Prefectural University

• Matsuda Toshihiro

  Department Of Information Systems Engineering Toyama Prefectural University

• Matsuda T

  Department Of Electronics And Informatics Toyama Prefectural University

• Morishita Takayuki

  Department Of Communication Engineering Okayama Prefectural University

• Ohzone T

  Dawn Enterprise Co. Ltd.

• Ohzone Takashi

  Department Of Communication Engineering Okayama Prefectural University

• Okada Kazuhiko

  Department Of Communication Engineering Okayama Prefectural University

• Iwata H

  Department Of Information Systems Engineering Toyama Prefectural University

• Iwata Hideyuki

  Department Of Electronics And Informatics Toyama Prefectural University

• Komoku Kiyotaka

  Department Of Communication Engineering Okayama Prefectural University

• Matsuda Toshihiro

  Department of Electronics and Informatics, Toyama Prefectural University

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