Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (Special Issue on SOI Devices and Their Process Technologies)

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概要

• 論文の詳細を見る

• Heavy-ion-induced soft errors (single event upset) in submicron silicon-on-insulator (SOI) MOSFETs under space environmental conditions are studied over the temperature range of 100-400K using three-dimensional device simulator with full-temperature models. The temperature dependence of the drain collected charge is examined in detail when a heavy-ion strikes the gate center perpendicularly. At very low temperatures, SOI MOSFETs have very high immunity to the heavy-ion-induced soft errors. In particular, alpha-particle-induced soft errors hardly occur at temperatures below 200K. As the temperature increases, the collected charge shows a marked rate of increase. The problem of single event upset in SOI MOSFETs becomes more serious with increasing working temperature. This is because the induced bipolar mechanism is a main factor to cause charge collection in SOI MOSFETs and the bipolar current increases exponentially with increasing temperature. At room and high temperatures, the drain collected charge is strongly dependent on channel length and SOI film thickness.

• 社団法人電子情報通信学会の論文
• 1997-03-25

著者

• IWATA Hideyuki

  Department of Information Systems Engineering, Toyama Prefectural University

• OHZONE Takashi

  Department of Communication Engineering, Okayama Prefectural University

• Ohzone Takashi

  Department Of Electronics And Informatics Toyama Prefectural University

• Ohzone Takashi

  Department Of Communication Engineering Okayama Prefectural University

• Iwata H

  Department Of Information Systems Engineering Toyama Prefectural University

• Iwata Hideyuki

  Department Of Electronics And Informatics Toyama Prefectural University

• OOOKA Tsukasa

  Department of Electronics and Informatics, Toyama Prefectural University

• Oooka Tsukasa

  Department Of Electronics And Informatics Toyama Prefectural University

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