An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal–Oxide–Semiconductor Transistors
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概要
- 論文の詳細を見る
An accurate and computationally efficient simulation method for quantum-mechanically treating dissipative electron transport in nanoscale double-gate metal–oxide–semiconductor field-effect transistors (DG MOSFETs) has been described. Within the nonequilibrium Green function formalism (NEGF), scattering can be simply treated on the base of Büttiker probes. The probe strength is related to the low-field mobility, which depends on the electron subband and longitudinal position. Therefore, the low-field mobility for every subband at every position along the channel has been calculated using the eigenenergies and wavefunctions along the confinement direction and the Fermi level along the channel per self-consistent loop. As a result, the effect of scattering can be rigorously treated under the NEGF formalism.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Ohzone Takashi
Department Of Communication Engineering Okayama Prefectural University
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Iwata Hideyuki
Department Of Electronics And Informatics Toyama Prefectural University
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan
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Ohzone Takashi
Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University
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Iwata Hideyuki
Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan
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- An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal–Oxide–Semiconductor Transistors
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