Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal-Oxide-Semiconductor Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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OHZONE Takashi
Department of Communication Engineering, Okayama Prefectural University
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Ohzone Takashi
Department Of Communication Engineering Okayama Prefectural University
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Iwata Hideyuki
Department Of Electronics And Informatics Toyama Prefectural University
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MATUDA Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University
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Matuda Toshihiro
Department Of Electronics And Informatics Toyama Prefectural University
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University
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