Transport Equations for Homogeneous and Variable-Composition Semiconductor Devices at Low Temperature
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概要
- 論文の詳細を見る
Transport equations for use in the analysis of homogeneous and variable composition semiconductor devices at low temperatures are reviewed. In these equations, Fermi-Dirac statistics and position-dependent band structure are taken into account. The general transport models developed previously by other workers are recast into a simple form so as to be convenient for use in numerical device simulation of semiconductors at low temperature.
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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IWATA Hideyuki
Department of Information Systems Engineering, Toyama Prefectural University
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OHZONE Takashi
Department of Communication Engineering, Okayama Prefectural University
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Ohzone Takashi
Department Of Communication Engineering Okayama Prefectural University
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Iwata Hideyuki
Department Of Electronics And Informatics Toyama Prefectural University
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