Fully Quantum-Mechanical Calculation of Gate Tunneling Current in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Devices : Semiconductors
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概要
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The gate leakage currents due to direct tunneling in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been investigated for various SOI layer thicknesses (t_<SOI>) using fully quantum-mechanical calculation. As t_<SOI> is reduced to 4 nm under the full-depletion condition, the gate tunneling current in SOI MOSFETs increases and becomes higher than that in bulk MOSFETs. However, considering the power supply voltage of SOI MOSFETs is lower than that of bulk MOSFETs, the increase is not so large as to become a serious problem. As t_<SOI> further decreases, the tunneling current decreases and then increases considerably for t_<SOI> below 2 nm. Such quantum-mechanical effects on the tunneling current in SOI MOSFETs are discussed in detail.
- 社団法人応用物理学会の論文
- 2001-06-15
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