Self-Consistent Calculations of Performance Parameters in Highly Doped Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
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概要
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The inversion-layer mobility, gate capacitance, transconductance and threshold voltage in highly doped silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been investigated for various SOI layer thicknesses (t_<SOI>) using self-consistent calculations. It has been found for SOI MOSFETs with highly doped channels that, whenever t_<SOI&get (≿ 2 nm) is reduced under the full-depletion condition, the current drive of SOI MOSFETs becomes higher than that of bulk MOSFETs because of the increase in the inversion-layer mobility. In such SOI MOSFETs, the total scattering rate of phonon and ionized impurity scatterings becomes lower with decreasing t_<SOI&get. These results are different from those of the previous work for SOI MOSFETs with low channel impurity concentration.
- 社団法人応用物理学会の論文
- 2001-02-01
著者
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IWATA Hideyuki
Department of Information Systems Engineering, Toyama Prefectural University
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Iwata Hideyuki
Department Of Electronics And Informatics Toyama Prefectural University
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