Numerical Simulation of Silicon-on-Insulator Thin-Film Solar Cells

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概要

• 論文の詳細を見る

• The properties of thin-film single-crystalline silicon solar cells fabricated on silicon-on-insulator (SOI) substrate have been investigated through two-dimensional numerical device simulation. The SOI film/buried SiO_2 interface condition is changed by varying the back-gate bias. When carriers are caused to accumulate the bottom region of the SOI film by application of large back-gate bias, the conversion efficiency is improved compared to that at zero back-gate bias. However, sufficiently high conversion efficiency cannot be obtained using the conventional structure. One proposal to increase the conversion efficiency of SOI thin-film solar cells is to form a very heavily doped region in the bottom of the SOI film. The newly proposed SOI solar cell has a conversion efficiency of about 24% if complete optical confinement is assumed.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• IWATA Hideyuki

  Department of Information Systems Engineering, Toyama Prefectural University

• OHZONE Takashi

  Department of Communication Engineering, Okayama Prefectural University

• TAKAKURA Hideyuki

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Ohzone Takashi

  Department Of Communication Engineering Okayama Prefectural University

• Iwata Hideyuki

  Department Of Electronics And Informatics Toyama Prefectural University

• Takakura Hideyuki

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• Takakura Hideyuki

  Department Of Electronics And Informatics Toyama Prefectural University

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