A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs

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概要

• 論文の詳細を見る

• A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.

• （社）電子情報通信学会の論文

著者

• MATSUDA Toshihiro

  Department of Information Systems Engineering, Toyama Prefectural University

• IWATA Hideyuki

  Department of Information Systems Engineering, Toyama Prefectural University

• Matsuda T

  Department Of Information Systems Engineering Toyama Prefectural University

• SUGIYAMA Yuya

  Department of Information Systems Engineering, Toyama Prefectural University

• NOHARA Keita

  Department of Information Systems Engineering, Toyama Prefectural University

• MORITA Kazuhiro

  Department of Information Systems Engineering, Toyama Prefectural University

• OHZONE Takashi

  Okayama Prefectural University

• MORISHITA Takayuki

  Okayama Prefectural University

• KOMOKU Kiyotaka

  Okayama Prefectural University

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