An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Matsuda T
Department Of Information Systems Engineering Toyama Prefectural University
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Matsuda Toshihiro
Department Of Information Systems Engineering Toyama Prefectural University
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Ohzone T
Dawn Enterprise Co. Ltd.
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