Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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MATSUDA Toshihiro
Department of Information Systems Engineering, Toyama Prefectural University
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IWATA Hideyuki
Department of Information Systems Engineering, Toyama Prefectural University
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OHZONE Takashi
Dawn Enterprise Co., LTD.
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Matsuda T
Department Of Information Systems Engineering Toyama Prefectural University
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OHZONE Takashi
Department of Communication Engineering, Okayama Prefectural University
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IBE Takashi
Department of Electronics and Informatics, Toyama Prefectural University
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NISHIHARA Kiyoshi
Department of Electronics and Informatics, Toyama Prefectural University
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IWATSUBO Satoshi
Central Research Institute, Toyama Industrial Technology Center
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Ihara Takashi
Department Of Electronics And Informatics Toyama Prefectural University
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Matsuda Toshihiro
Department Of Information Systems Engineering Toyama Prefectural University
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Matsuda T
Department Of Electronics And Informatics Toyama Prefectural University
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Ohzone T
Dawn Enterprise Co. Ltd.
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Ohzone Takashi
Department Of Communication Engineering Okayama Prefectural University
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Iwata H
Department Of Information Systems Engineering Toyama Prefectural University
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Iwata Hideyuki
Department Of Electronics And Informatics Toyama Prefectural University
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Nishihara Kiyoshi
Department Of Electronics And Informatics Toyama Prefectural University
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Iwatsubo Satoshi
Central Research Institute Toyama Industrial Technology Center
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University
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