Matsuda T | Department Of Electronics And Informatics Toyama Prefectural University

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概要

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著作論文

A CMOS Temperature Sensor Circuit(Integrated Electronics)
A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width(Semiconductor Materials and Devices)
A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET(Semiconductor Materials and Devices)
Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate
A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit(Integrated Electronics)
A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission(Microelectronic Test Structures)
Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors
Quantum-Mechanical Simulation of Counter Doped Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Single Work Function Metal Gate
Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO_2(Special Issue on Electronic Displays)
Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n^+-Polysilicon Gates
A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs(Special Issue on Microelectronic Test Structures)
A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs (Special Issue on Microelectronic Test Structures)
Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs
Wiener-Hopf Analysis of the Diffraction by an Impedance Wedge : The Case of E Polarization

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