Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO_2(Special Issue on Electronic Displays)
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概要
- 論文の詳細を見る
Electroluminescence (EL) under alternating-current (ac) operation is first reported for n^+ -polysilicon/SiO_2/p-Si MOS capacitors with 50 nm Si-implanted SiO_2. Visible EL can be observed with the naked eye in the dark. The ac operation by pulse-wave distinctly enhances the EL intensity and its lifetime. The pulse frequency affects the EL spectrum and thus the EL color. A model of EL mechanism is proposed for the Si-implanted MOS EL device, which has a possibility of visible light emitting device.
- 社団法人電子情報通信学会の論文
- 2002-11-01
著者
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MATSUDA Toshihiro
Department of Information Systems Engineering, Toyama Prefectural University
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IWATA Hideyuki
Department of Information Systems Engineering, Toyama Prefectural University
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OHZONE Takashi
Dawn Enterprise Co., LTD.
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Matsuda T
Department Of Information Systems Engineering Toyama Prefectural University
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MATSUDA Toshihiro
the Department of Electronics and Informatics, Toyama Prefectural University
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KAWABE Masaharu
the Department of Electronics and Informatics, Toyama Prefectural University
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IWATA Hideyuki
the Department of Electronics and Informatics, Toyama Prefectural University
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OHZONE Takashi
the Department of Electronics and Informatics, Toyama Prefectural University
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Matsuda Toshihiro
Department Of Information Systems Engineering Toyama Prefectural University
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Matsuda T
Department Of Electronics And Informatics Toyama Prefectural University
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Kawabe Masaharu
The Department Of Electronics And Informatics Toyama Prefectural University
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Ohzone T
Dawn Enterprise Co. Ltd.
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Iwata H
Department Of Information Systems Engineering Toyama Prefectural University
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