Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO_2(Special Issue on Electronic Displays)

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概要

• 論文の詳細を見る

• Electroluminescence (EL) under alternating-current (ac) operation is first reported for n^+ -polysilicon/SiO_2/p-Si MOS capacitors with 50 nm Si-implanted SiO_2. Visible EL can be observed with the naked eye in the dark. The ac operation by pulse-wave distinctly enhances the EL intensity and its lifetime. The pulse frequency affects the EL spectrum and thus the EL color. A model of EL mechanism is proposed for the Si-implanted MOS EL device, which has a possibility of visible light emitting device.

• 社団法人電子情報通信学会の論文
• 2002-11-01

著者

• MATSUDA Toshihiro

  Department of Information Systems Engineering, Toyama Prefectural University

• IWATA Hideyuki

  Department of Information Systems Engineering, Toyama Prefectural University

• OHZONE Takashi

  Dawn Enterprise Co., LTD.

• Matsuda T

  Department Of Information Systems Engineering Toyama Prefectural University

• MATSUDA Toshihiro

  the Department of Electronics and Informatics, Toyama Prefectural University

• KAWABE Masaharu

  the Department of Electronics and Informatics, Toyama Prefectural University

• IWATA Hideyuki

  the Department of Electronics and Informatics, Toyama Prefectural University

• OHZONE Takashi

  the Department of Electronics and Informatics, Toyama Prefectural University

• Matsuda Toshihiro

  Department Of Information Systems Engineering Toyama Prefectural University

• Matsuda T

  Department Of Electronics And Informatics Toyama Prefectural University

• Kawabe Masaharu

  The Department Of Electronics And Informatics Toyama Prefectural University

• Ohzone T

  Dawn Enterprise Co. Ltd.

• Iwata H

  Department Of Information Systems Engineering Toyama Prefectural University

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