Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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IWATA Hideyuki
Department of Information Systems Engineering, Toyama Prefectural University
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Iwata Hideyuki
Department Of Electronics And Informatics Toyama Prefectural University
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