IWATA Hideyuki | Department of Information Systems Engineering, Toyama Prefectural University

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概要

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著作論文

Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs
A CMOS Temperature Sensor Circuit(Integrated Electronics)
A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width(Semiconductor Materials and Devices)
A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET(Semiconductor Materials and Devices)
Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate
A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit(Integrated Electronics)
A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission(Microelectronic Test Structures)
Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors
Quantum-Mechanical Simulation of Counter Doped Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Single Work Function Metal Gate
Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO_2(Special Issue on Electronic Displays)
Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n^+-Polysilicon Gates
Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs
Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (Special Issue on SOI Devices and Their Process Technologies)
Self-Consistent Calculations of Performance Parameters in Highly Doped Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
Fully Quantum-Mechanical Calculation of Gate Tunneling Current in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Devices : Semiconductors
Photocarrier Generation Rate Model of Textured Silicon Solar Cells
Transport Equations for Homogeneous and Variable-Composition Semiconductor Devices at Low Temperature
Impact of Surface Band Bending at the Rear Si-SiO_2 Interface on Conversion Efficiency of Rear Locally-Contacted Silicon Solar Cells
Reduction of A Surge-Pulse by A New CMOS-type Diode
A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs
Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices
Numerical Simulation of Silicon-on-Insulator Thin-Film Solar Cells

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