Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90゜and 45゜ (Special Issue on Microelectronic Test Structure)
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概要
- 論文の詳細を見る
The electrical characteristics of scaled CMOSFETs with gates crossing sources/drains at 90゜and 45゜are experimentally investigated using test devices fabricated by an n-well CMOS process with trench isolation. Gain factors of surface-channel 90゜and 45゜n-MOSFETs can be estimated by a simple correction theory based on the combination of a center MOSFET and two edge MOSFETs. However, relatively large departures from the theory are observed in buried-channel 90゜and 45゜p-MOSFETs with widths less than the channel length. The difference between n- and p-MOSFETs is mainly due to the channel type. Other basic device parameters such as saturation drain currents, threshold voltages, subthreshold swings, maximum substrate currents and substrate-voltage dependence of threshold voltages are also measured and qualitatively explained.
- 社団法人電子情報通信学会の論文
- 1996-02-25
著者
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Matsuyama Naoko
Department Of Electronics And Informatics Toyama Prefectual University
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Ohzone Takashi
Department Of Electronics And Informatics Toyama Prefectual University
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Ohzone Takashi
Department Of Communication Engineering Okayama Prefectural University
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