Experimental Study of Impact Ionization Phenomena in Sub-0.1 μm Si Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Odanaka S
Cybermedia Center Osaka University
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Odanaka Shinji
Semiconductor Research Center Matsushita Electric Ind.co.
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HIROKI Akira
Semiconductor Technology Academic Research Center (STARC)
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Hori Atsushi
Semiconductor Research Center Matsushita Electric Ind.co.
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Hori Atsushi
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Akira Hiroki
Division Of Information And Production Science Graduate School Of Engineering And Science Kyoto Inst
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MORIYAMA AKAMATSU
Semiconductor Research Center, Matsushita Electric Ind.Co.
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Akamatsu Kaori
Semiconductor Research Center, Matsushita Electric Ind. Co., Moriguchi, Osaka 570, Japan
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Moriyama Akamatsu
Semiconductor Research Center Matsushita Electric Ind.co.
関連論文
- A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs(Special Issue on Microelectronic Test Structures)
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- Experimental Study of Impact Ionization Phenomena in Sub-0.1 μm Si Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
- An Experimental Study of Impact Ionization Phenomena in Sub-0.1μm Si MOSFETs
- A Novel Dual Gate CMOS Technology Using Low Energy Phosphorous/Boron Implantation and Arsenic Pre-Amorphization
- A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs
- Modeling and Analytical Calculation of Strain Induced by Gradual Variation of Composition in Bulk In_xGa_As Mixed Crystal