Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-15
著者
-
佐野 伸行
筑波大学物理工学系
-
SANO Nobuyuki
Institute of Applied Physics, University of Tsukuba
-
MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
-
NAKAYAMA Noriaki
Semiconductor Technology Academic Research Center(STARC)
-
HIROKI Akira
Semiconductor Technology Academic Research Center (STARC)
-
Nakayama Noriaki
Semiconductor Technology Academic Research Center
-
Nakayama Noriaki
Fujitsu Laboratories Ltd.
-
Nakayama Noriaki
Semiconductor Technology Academic Research Center (starc)
-
Nakayama Noriaki
Department Of Advanced Materials Science And Engineering Faculty Of Engineering
-
Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
-
Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
-
Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
-
Matsuzawa K
Toshiba Corp. Yokohama‐shi Jpn
-
Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
関連論文
- 不純物に起因するポテンシャル揺らぎの電子移動度への影響
- 統計的解析によるPoly-Si TFTの結晶粒界の影響の評価(プロセス・デバイス・回路シミュレーション及び一般)
- 統計的解析によるPoly-Si TFTの結晶粒界の影響の評価(プロセス・デバイス・回路シミュレーション及び一般)
- デバイス・シミュレーションとその物理
- 不純物に起因するポテンシャル揺らぎの電子移動度への影響
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- 微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
- 微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
- 微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
- 微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
- 28p-G-2 極微細デバイス構造のもとでの電流ゆらぎのシミュレーション解析II
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- Non-stoichiometry and Antiferromagnetic Phase Transition of NaCl-type CrN Thin Films Prepared by Reactive Sputtering
- Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress
- Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
- An Evaluation Method of the Number of Monte Carlo STA Trials for Statistical Path Delay Analysis
- Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers : Beyond Matthiessen's Rule
- Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
- Transport Characteristics of the Cross Junction of Atomic Chains
- Exchange Anisotropy of CrN_x/FeN_y/CrN_x Trilayer Thin Films Prepared by Reactive Sputtering
- Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron Sputtering
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- Low Temperature Synthesis of CdTe and Its Application to CdS/CdTe Solar Cell : III-1: II-VI COMPOUND SOLAR CELLS
- Screen -Printable Electrode Material for CdS and Its Application to Solar Cell : III-1: II-VI COMPOUND SOLAR CELLS
- Screen Printed Thin Film CdS/CdTe Solar Cell
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
- Hydration enthalpy for synthetic and cation exchanged A-type zeolites with special reference to zeolite heat pump media
- Ionic conduction and thermal nature of synthetic Cu_3BiS_3
- Synthesis of a Misfit-layered Magnesium Manganese Hydroxide Oxide
- Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
- Coherent Interface Structures Observed in Co/Au(001) Epitaxial Superlattices
- X-Ray Diffraction Measurements of Lattice Strains in Co/Pd(001) Superlattice Filrms
- Ferromagnetic Resonance of Mn/Sb Multilayered Films with Artificial Superstructure
- Monolayer of Ferromagnetic MnSb
- Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
- A Compact Model of the Pinch-off Region of 100nm MOSFETs Based on the Surface-Potential(Semiconductor Materials and Devices)
- 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)
- Quantum Effect in Sub-0.1μm MOSFET with Pocket Technologies and Its Relevance for the On-Current Condition
- Circuit Simulation Models for Coming MOSFET Generations(Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
- Synthesis and Characterization of a Novel Misfit-layered Copper Manganese Hydroxide Oxide
- High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
- Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
- Experimental Study of Impact Ionization Phenomena in Sub-0.1 μm Si Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
- An Experimental Study of Impact Ionization Phenomena in Sub-0.1μm Si MOSFETs
- Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
- Schottky Barrier MOSFETs as Resonant Tunneling Devices
- The Resonant Tunneling Mode of a Single Electron Transistor
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- Characteristics of Superconducting Nb Layer Fabricated Using High-Vacuum Electron Beam Evaporation
- Improvement of Stability in CdS-Cu_2S Ceramic Solar Cells
- CdS-CdTe Solar Cell Prepared by Vapor Phase Epitaxy
- Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
- Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
- A New Design Scheme for Logic Circuits with Single Electron Transistors
- Analysis of Recombination Process Resonantly Excited with Free Exciton Energy on CuInS_2 Using Photoacoustic Spectroscopy (Short Note)
- Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron Sputtering
- A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
- Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
- Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
- Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
- Transport Characteristics of the Cross Junction of Atomic Chains
- Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule