Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

概要

論文の詳細を見る
In this study, we developed a unified reaction--diffusion (R--D) model for the negative bias temperature instability (NBTI) effect over a wide range of stress times. The newly developed model provides a physics-based uniform solution and overcomes the limitations of the classical R--D models that cannot describe both the short and the long term stress regions simultaneously. In our modeling framework, the chemical reaction between inversion channel carriers and Si--H bonds at the Si/SiO2 interface dominates the short-term NBTI effects at the beginning of the stress application. Then the H2 diffusion into the polycrystalline silicon (poly-Si) gate becomes responsible for long term stress degradation. Finally, the developed R--D model is implemented into the advanced metal oxide semiconductor field effect transistor (MOSFET) model HiSIM to enable accurate circuit-aging simulation. Simulation results for the current degradation and their comparison with measurements verify the achieved high accuracy and the practical applicability of the developed NBTI model.
2012-02-25