IIZUKA Takahiro | Semiconductor Technology Academic Research Center
スポンサーリンク
概要
関連著者
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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TAGUCHI Masahiko
Semiconductor Technology Academic Research Center
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Ohguro Tatsuya
Semiconductor Company Toshiba Corporation
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Mattausch Hans
Hiroshima University
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MIYAMOTO Shunsuke
Semiconductor Technology Academic Research Center
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Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Miura‐mattausch M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miura-mattausch Mitiko
Hiroshima-university
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Feldmann Uwe
Hiroshima Univ. Higashihiroshima‐shi Jpn
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SADACHIKA Norio
Hiroshima University
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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Feldmann Uwe
Hiroshima University
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MIYAKE Masataka
Hiroshima University
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HORI Daisuke
Hiroshima University
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OHGURO Tatsuya
Semiconductor Technology Academic Research Center
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HOSHIDA Teruhiko
Semiconductor Technology Academic Research Center
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Ohguro Tatsuya
Department Of Physics Faculty Of Science Hokkaido University
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Kumashiro Shigetaka
Semiconductor Technology Academic Research Center
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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Navarro Dondee
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ezaki Tatsuya
Graduate School Of Advanced Science Of Matter Hiroshima University
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Mizoguchi Takeshi
Semiconductor Technology Academic Research Center
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Matsumoto S
Semiconductor Technology Academic Research Center
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Sadachika Norio
Hiroshima-university
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
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Mattausch Hans
Research Center For Nanodevices And Systems Hiroshima University
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MIURA MATTAUSCH
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SAHARA Yasuyuki
Semiconductor Technology Academic Research Center
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TSUKADA Toshiro
Semiconductor Technology Academic Research Center
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EZAKI Tatsuya
Graduate School of Advanced Science of Matter, Hiroshima University
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Kumashiro S
Ulsi Device Development Division Nec Corporation
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TAKEDA Youichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miura‐mattausch Mitiko
Hiroshima University
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Miura Mattausch
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Takeda Youichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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CHIBA Shingo
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Chiba Shingo
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ezaki Tatsuya
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Tsukada Toshiro
Semiconductor & Integrated Circuits Group Hitachi Lid.
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Ma Chenyue
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Yamaguchi Seiichiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Kinoshita Akinari
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Arakawa Takahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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He Jin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ezaki Tatsuya
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mizukane Yoshio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Matsumoto Kenji
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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NAVARRO Dondee
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Hoshida Teruhiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Takeda Yoichi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Minami Takafumi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hance
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyamoto Syunsuke
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Navarro Dondee
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
著作論文
- Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
- Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
- MOSFET Harmonic Distortion up to the Cutoff Frequency : Measurement and Theoretical Analysis
- Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
- Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
- Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic