Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
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概要
- 論文の詳細を見る
We have developed a surface-potential-based metal–oxide–silicon (MOS)-varactor model valid for RF applications up to 200 GHz. The model enables the calculation of the MOS-varactor capacitance seamlessly from the depletion region to the accumulation region and explicitly considers the carrier-response delay causing a non-quasi-static (NQS) effect. It has been observed that capacitance reduction due to this non-quasi-static effect limits the MOS-varactor application to an RF regime.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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TAGUCHI Masahiko
Semiconductor Technology Academic Research Center
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MIYAMOTO Shunsuke
Semiconductor Technology Academic Research Center
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Kumashiro Shigetaka
Semiconductor Technology Academic Research Center
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Navarro Dondee
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ezaki Tatsuya
Graduate School Of Advanced Science Of Matter Hiroshima University
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Ohguro Tatsuya
Semiconductor Company Toshiba Corporation
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ezaki Tatsuya
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mizukane Yoshio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Matsumoto Kenji
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Navarro Dondee
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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