Solution of the Poisson Equation with Coulomb Singularities
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概要
- 論文の詳細を見る
We present a new method of calculating electrostatic potential in electronic devices of complicated geometry with singular charge distribution. The method is based on analytical representation of regular and singular parts of the potential function which can be constructed independently in different parts the device. Parameters of such representation are calculated recursively and large scale $N^{3}$ computer operations are avoided. The method is robust, fast, does not have limitations on the device geometry and can be readily used in statistical simulations. We illustrate the method by computing the electrostatic potential in double-gate metal–oxide–semiconductor field-effect transistor (MOSFET) with a positive impurity in the intrinsic channel.
- 2008-10-25
著者
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Kamakura Yoshinari
Graduate School Of Engineering Osaka University
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Mori Nobuya
Graduate School Of Engineering Osaka University
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Ezaki Tatsuya
Graduate School Of Advanced Science Of Matter Hiroshima University
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Kamakura Yoshinari
Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Mori Nobuya
Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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