Quantum Modeling of Carrier Transport through Silicon Nano-devices(Session2: Silicon Devices I)
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概要
- 論文の詳細を見る
Drain-current-gate-voltage characteristics of nano-scale silicon MOSFETs have been calculated within non-equilibrium Green's function formalism to study crystalline orientation effects on ballistic hole current in ultrathin-body double-gate MOSFETs. A <110>-channel device on (110)-substrate is found to carry the highest current density. Device-characteristics difference between double-gate and gate-all-around MOSFETs is also discussed.
- 一般社団法人電子情報通信学会の論文
- 2008-07-02
著者
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Mori Nobuya
Graduate School Of Engineering Osaka University
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Minari Hideki
Graduate School Of Engineering Osaka University
関連論文
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