Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array
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概要
- 論文の詳細を見る
Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.
- The Japan Society of Applied Physicsの論文
- 2013-04-25
著者
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Tomita Masanori
Faculty Of Agriculture Hirosaki University
-
Mori Nobuya
Graduate School Of Engineering Osaka University
-
Minari Hideki
Graduate School Of Engineering Osaka University
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Koshida Nobuyoshi
Graduate School Of Eng. Tokyo Univ. Of A&t
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Watanabe Takanobu
Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
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Minari Hideki
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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