Dynamic-Carrier-Distribution-Based Compact Modeling of p--i--n Diode Reverse Recovery Effects
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概要
- 論文の詳細を見る
This paper presents a compact model of the diode reverse recovery effect for the simulation program with integrated circuit emphasis (SPICE) simulation. We found that the reverse recovery effect can be described with the dynamic carrier distribution within the lightly-doped N- drift layer of a p--i--n power diode. The proposed model is verified with two-dimensional (2D) device simulation results and compared with a lumped-charge-based conventional model.
- 2012-02-25
著者
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Miyake Masataka
HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Nakashima Junichi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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