A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• Nakayama Noriaki

  Graduate School Of Advanced Science Of Matter Hiroshima University

• Tanaka Masahiko

  Core Technology Center Digital Media Network Company Toshiba Corporation

• Ueno Hiroaki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• INOUE Tetsuhiro

  Graduate School of Advanced Science of Matter, Hiroshima University

• ISA Takashi

  Graduate School of Advanced Science of Matter, Hiroshima University

• TANAKA Masayasu

  Graduate School of Advanced Science of Matter, Hiroshima University

• MIURA-MATTAUSCH Mitiko

  Graduate School of Advanced Science of Matter, Hiroshima University

関連論文

• Experimental Study of High-Density Rewritable Optical Disk Using a Blue-Laser Diode
• A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
• High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer
• Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
• A Compact Model of the Pinch-off Region of 100nm MOSFETs Based on the Surface-Potential(Semiconductor Materials and Devices)
• 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)
• Circuit Simulation Models for Coming MOSFET Generations(Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
• Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition
• 100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions(Devices and Circuits for Next Generation Multi-Media Communication Systems)
• Carrier Transport Model for Lateral p-i-n Photodiode in High-Frequency Operation
• 100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions
• Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
• Experimental Study of High-Density Rewritable Optical Disk Using a Blue-Laser Diode
• Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model
• Dynamic-Carrier-Distribution-Based Compact Modeling of p--i--n Diode Reverse Recovery Effects
• Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
• A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
• Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
• Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
• Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic
• Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
• Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge (Special Issue : Solid State Devices and Materials)
• Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation
• High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer

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