Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic
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概要
- 論文の詳細を見る
Non-linearity of metal oxide semiconductor field-effect transistor (MOSFET) characteristics induces harmonic distortions, which causes serious problems for RF analog applications. Features of the harmonic distortions are investigated experimentally under high frequency operations. Comparison of measured harmonic distortions with inter-modulation distortions concludes that the harmonic distortions are frequency dependent under high frequency operations. A reason for this is enhanced contribution of the displacement, which is originally frequency dependent.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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TAGUCHI Masahiko
Semiconductor Technology Academic Research Center
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Ohguro Tatsuya
Semiconductor Company Toshiba Corporation
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Takeda Yoichi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Minami Takafumi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hance
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyamoto Syunsuke
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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