A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response

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概要

• 論文の詳細を見る

• We have developed a basic concept for a non-quasi-static (NQS) metal-oxide-semiconductor field-effect transistor (MOSFET) model for circuit simulation. The model is based on a carrier-response delay, and incorporates the time and position dependence of the carrier density along the channel. This is the exact origin of the NQS effect. By comparing model results with 2D device simulation results, solving the continuity equation explicitly, we found that the carrier-response delay consisted of a conductive delay and a charging delay. The developed model was successfully applied to test transient behavior of the drain current.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Nakayama Noriaki

  Graduate School Of Advanced Science Of Matter Hiroshima University

• Ueno Hiroaki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• INOUE Tetsuhiro

  Graduate School of Advanced Science of Matter, Hiroshima University

• ISA Takashi

  Graduate School of Advanced Science of Matter, Hiroshima University

• TANAKA Masayasu

  Graduate School of Advanced Science of Matter, Hiroshima University

• MIURA-MATTAUSCH Mitiko

  Graduate School of Advanced Science of Matter, Hiroshima University

• Miura-Mattausch Mitiko

  Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

• Tanaka Masayasu

  Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

• Isa Takashi

  Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

• Nakayama Noriaki

  Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

• Inoue Tetsuhiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

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