Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge (Special Issue : Solid State Devices and Materials)
スポンサーリンク
概要
著者
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Yamamoto Takao
Electronics Device Business Unit, DENSO Corporation, Kariya, Aichi 448-8661, Japan
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