MIURA-MATTAUSCH Mitiko | Graduate School of Advanced Science of Matter, Hiroshima University

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概要

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著作論文

A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer
Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
Circuit Simulation Models for Coming MOSFET Generations(Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition
100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions(Devices and Circuits for Next Generation Multi-Media Communication Systems)
Carrier Transport Model for Lateral p-i-n Photodiode in High-Frequency Operation
100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions
Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model
Dynamic-Carrier-Distribution-Based Compact Modeling of p--i--n Diode Reverse Recovery Effects
Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic
Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge (Special Issue : Solid State Devices and Materials)
Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation
High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer

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