Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation
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概要
- 論文の詳細を見る
The circuit simulation model Hiroshima-university STARC IGFET Model silicon-on-insulator (HiSIM-SOI) for the fully depleted SOI metal-oxide-semiconductor field-effect-transistor (MOSFET) is developed based on the surafce-potential description. To include all device features of the SOI-MOSFET explicitly, the surface potential values not only at the SOI surface but also the back side, as well as the bulk back-gate are solved iteratively. The total iteration for the potential calculation requires only about twice as much calculation time as the bulk-MOSFET case, solving ony at the surface. The model reproduces measured $I$–$V$ characteristics within numerical accuracy, and is proved stable circuit convergence.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739–8526, Japan
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739–8526, Japan
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Kitamaru Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739–8526, Japan
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Uetsuji Yasuhito
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739–8526, Japan
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Uetsuji Yasuhito
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739–8526, Japan
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Kitamaru Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739–8526, Japan
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