Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance
スポンサーリンク
概要
- 論文の詳細を見る
The high-speed switching performance of a complementary metal–oxide–semiconductor field-effect transistor (CMOSFET) inverters is analyzed. It is found that the propagation delay of an inverter can no lomger be described by a DC-current-based estimate, but that the charging/discharging current is essential for the propagation delay prediction under high-frequency operation.
- 2010-04-25
著者
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Masataka Miyake
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Hori Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kazuya Matsuzawa
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Mitiko Miura-Mattausch
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Norio Sadachika
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Hans-Juergen Mattausch
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Takahiro Iizuka
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Teruhiko Hoshida
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Yasuyuki Sahara
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Toshiro Tsukada
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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