Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
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概要
- 論文の詳細を見る
The double-gate (DG) metal oxide semiconductor field-effect transistor (MOSFET) is considered to be a promising for the next-generation device. We have developed a model describing the short-channel effects of the DG-MOSFET. The model describes suppression of the short-channel effect with the reduction of the silicon layer thickness. Modeling for further suppression of the short-channel effect is achieved by considering the volume inversion effect. The developed model reproduces the suppressed short-channel effect of the DG-MOSFET as a function of the silicon layer thickness down to 10 nm for any gate length with three model parameters.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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TANABE Ryo
Fujitsu Laboratories Ltd.
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Oka Hideki
Fujitsu Laboratories Ltd
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Yumisaki Akihiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Yumisaki Akihiro
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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