Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
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概要
- 論文の詳細を見る
We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.
- （社）電子情報通信学会の論文
- 2008-08-01
著者
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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OKA Hideki
Fujitsu Laboratories Ltd.
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Mattausch Hans
Hiroshima University
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SADACHIKA Norio
Hiroshima University
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MURAKAMI Takahiro
Hiroshima University
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TANABE Ryou
Fujitsu laboratories Ltd.
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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Oka Hideki
Fujitsu Laboratories Ltd
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Sadachika Norio
Hiroshima-university
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Murakami Takahiro
HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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