Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100nm SOC Circuit Design
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概要
- 論文の詳細を見る
The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.
- (社)電子情報通信学会の論文
- 2011-03-01
著者
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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SADACHIKA Norio
Hiroshima University
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Miura‐mattausch Mitiko
Hiroshima University
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Miura‐mattausch M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Yumisaki Akihiro
Hiroshima-university
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Sadachika Norio
Hiroshima-university
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Miura-mattausch Mitiko
Hiroshima-university
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MIMURA Shu
Hiroshima-University
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JOHGUCHI Kou
Hiroshima-University
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KAYA Akihiro
Hiroshima-University
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