Compact Modeling of Expansion Effects in LDMOS

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概要

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• In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.

著者

• Feldmann Uwe

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• MIURA-MATTAUSCH Mitiko

  Hiroshima University

• MIYAKE Masataka

  Hiroshima University

• Tanaka Akihiro

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Kikuchihara Hideyuki

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• IIZUKA Takahiro

  Hiroshima University

• SAKUDA Takashi

  Hiroshima University

• ORITSUKI Yasunori

  Hiroshima University

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