Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
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概要
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Reverse-recovery modeling for p-i-n diodes in the high current-density conditions are discussed. With the dynamic carrier-distribution-based modeling approach, the reverse recovery behaviors are explained in the high current-density conditions, where the nonquasi-static (NQS) behavior of carriers in the drift region is considered. In addition, a specific feature under the high current-density condition is discussed. The proposed model is implemented into a commercial circuit simulator in the Verilog-A language and its reverse recovery modeling ability is verified with a two-dimensional (2D) device simulator, in comparison to the conventional lumped-charge modeling technique.
著者
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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MIYAKE Masataka
Hiroshima University
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NAKASHIMA Junichi
Hiroshima University
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