Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
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概要
- 論文の詳細を見る
The trench-gate type high-voltage (HV) MOSFET is one of the variants of HV-MOSFET, typically with its utility segments lying on a larger power consumption domain, compared to planar HV-MOSFETs. In this work, the HiSIM_HV compact model, originally intended for planar LDMOSFETs, was adequately extended to accommodate trench-gate type HV-MOSFETs. The model formulation focuses on a closed-form description of the current path in the highly resistive drift region, specific to the trench-gate HV-MOSFETs. It is verified that the developed compact expression can capture the conductivity in the drift region, which varies with voltage bias and device technology such as trench width. The notable enhancement of current drivability can be accounted for by the electrostatic control exerted by the trench gate within the framework of this model.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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MIYAKE Masataka
Hiroshima University
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Tanaka Akihiro
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kikuchihara Hideyuki
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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FUKUSHIMA Kenji
Hiroshima University
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IIZUKA Takahiro
Hiroshima University
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