Kikuchihara Hideyuki | Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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概要

• Kikuchihara Hideyukiの詳細を見る
• 同名の論文著者
• Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japanの論文著者

関連著者

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• MIYAKE Masataka

  Hiroshima University

• Tanaka Akihiro

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Kikuchihara Hideyuki

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• MIURA-MATTAUSCH Mitiko

  Hiroshima University

• IIZUKA Takahiro

  Hiroshima University

• Feldmann Uwe

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• SAKUDA Takashi

  Hiroshima University

• ORITSUKI Yasunori

  Hiroshima University

• Kanamoto Toshiki

  Renesas Design Corp.

• Amakawa Shuhei

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miura-Mattausch Michiko

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Masuda Hiroo

  Renesas Electronics Corporation, Takasaki, Gunma 370-0021, Japan

• Kanamoto Toshiki

  Renesas Electronics Corporation, Takasaki, Gunma 370-0021, Japan

• Mattausch Hans

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Saito Takashi

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Hayashi Takuro

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• FUKUSHIMA Kenji

  Hiroshima University

もっと見る 閉じる

著作論文

• Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics
• Compact Modeling of Expansion Effects in LDMOS
• Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
• Compact Modeling of Expansion Effects in LDMOS

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