MIYAKE Masataka | Hiroshima University
スポンサーリンク
概要
関連著者
-
MIYAKE Masataka
Hiroshima University
-
MIURA-MATTAUSCH Mitiko
Hiroshima University
-
Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
-
Feldmann Uwe
Hiroshima Univ. Higashihiroshima‐shi Jpn
-
Tanaka Akihiro
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
Kikuchihara Hideyuki
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
SADACHIKA Norio
Hiroshima University
-
IIZUKA Takahiro
Hiroshima University
-
Mattausch Hans
Hiroshima University
-
Feldmann Uwe
Hiroshima University
-
HORI Daisuke
Hiroshima University
-
IIZUKA Takahiro
Semiconductor Technology Academic Research Center
-
Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
-
Miura‐mattausch M
Hiroshima Univ. Higashi‐hiroshima Jpn
-
Sadachika Norio
Hiroshima-university
-
Miura-mattausch Mitiko
Hiroshima-university
-
SAKUDA Takashi
Hiroshima University
-
NAKASHIMA Junichi
Hiroshima University
-
ORITSUKI Yasunori
Hiroshima University
-
MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
-
OHGURO Tatsuya
Semiconductor Technology Academic Research Center
-
TAGUCHI Masahiko
Semiconductor Technology Academic Research Center
-
MIYAMOTO Shunsuke
Semiconductor Technology Academic Research Center
-
SAHARA Yasuyuki
Semiconductor Technology Academic Research Center
-
HOSHIDA Teruhiko
Semiconductor Technology Academic Research Center
-
TSUKADA Toshiro
Semiconductor Technology Academic Research Center
-
Ohguro Tatsuya
Department Of Physics Faculty Of Science Hokkaido University
-
Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
-
Mizoguchi Takeshi
Semiconductor Technology Academic Research Center
-
Miura‐mattausch Mitiko
Hiroshima University
-
Ohguro Tatsuya
Semiconductor Company Toshiba Corporation
-
Matsumoto S
Semiconductor Technology Academic Research Center
-
Kanamoto Toshiki
Renesas Design Corp.
-
Tsukada Toshiro
Semiconductor & Integrated Circuits Group Hitachi Lid.
-
Yokomichi Masahiro
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
-
Amakawa Shuhei
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
Miura-Mattausch Michiko
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
Miura-Mattausch Mitiko
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
-
Masuda Hiroo
Renesas Electronics Corporation, Takasaki, Gunma 370-0021, Japan
-
Sadachika Norio
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
-
Kajiwara Takahiro
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
-
Kanamoto Toshiki
Renesas Electronics Corporation, Takasaki, Gunma 370-0021, Japan
-
Mattausch Hans
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
Mattausch Hans
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
-
Saito Takashi
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
Hayashi Takuro
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
FUKUSHIMA Kenji
Hiroshima University
著作論文
- Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
- Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
- Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics
- Compact Modeling of Expansion Effects in LDMOS
- Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
- Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization
- Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
- Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
- Compact Modeling of Expansion Effects in LDMOS