Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors

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概要

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• Frequency dependent properties of accumulation-mode MOS varactors, which are key elements in many RF circuits, are dominated by Non-Quasi-Static (NQS) effects in the carrier transport. The circuit performances containing MOS varactors can hardly be reproduced without considering the NQS effect in MOS-varactor models. For the LC-VCO circuit as an example it is verified that frequency-tuning range and oscillation amplitude can be overestimated by over 20% and more than a factor 2, respectively, without inclusion of the NQS effect.

• （社）電子情報通信学会の論文
• 2009-06-01

著者

• Feldmann Uwe

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Mattausch Hans

  Hiroshima University

• SADACHIKA Norio

  Hiroshima University

• MIURA-MATTAUSCH Mitiko

  Hiroshima University

• Feldmann Uwe

  Hiroshima University

• MIYAKE Masataka

  Hiroshima University

• HORI Daisuke

  Hiroshima University

• OHGURO Tatsuya

  Semiconductor Technology Academic Research Center

• IIZUKA Takahiro

  Semiconductor Technology Academic Research Center

• TAGUCHI Masahiko

  Semiconductor Technology Academic Research Center

• MIYAMOTO Shunsuke

  Semiconductor Technology Academic Research Center

• Ohguro Tatsuya

  Department Of Physics Faculty Of Science Hokkaido University

• Mattausch Hans

  Research Institute For Nanodevice And Bio Systems Hiroshima University

• Mizoguchi Takeshi

  Semiconductor Technology Academic Research Center

• Miura‐mattausch M

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Ohguro Tatsuya

  Semiconductor Company Toshiba Corporation

• Matsumoto S

  Semiconductor Technology Academic Research Center

• Sadachika Norio

  Hiroshima-university

• Miura-mattausch Mitiko

  Hiroshima-university

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