Circuit-Simulation Model of C_<gd> Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(<Special Issue>the IEEE International Conference on SISPAD '02)

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概要

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• Small-size MOSFETs are becoming core devices in RF applications because of improved high frequency characteristics. For reliable design of RF integrated circuits operating at the GHz range, accurate modeling of small-size MOSFET characteristics is indispensable. In MOSFETs with reduced gate length (L_g), the lateral field along the MOSFET channel is becoming more pronounced, causing short-channel effects. These effects should be included in the device modeling used for circuit simulation. In this work, we investigated the effects of the field gradient in the gate-drain capacitance (C_<gd>). 2-Dimensional (2D) simulations done with MEDICI show that the field gradient, as it influences the channel condition, induces a capacitance which is visible in the MOSFET saturation operation. Changes in C_<gd> is incorporated in the modeling by an induced capacitance approach. The new approach has been successfully implemented in the surface-potential based model HiSIM (Hiroshima-university STARC IGFET Model) and is capable of reproducing accurately the measured C_<gd>-L_g characteristics, which are particularly significant for pocket-implant technology. Results show that pocket-implantation introduces a steep potential increase near the drain region, which results to a shift of the C_<gd> transition region (from linear to saturation) to lower bias voltages. C_<gd> at saturation decreases with L_g due to steeper surface potential and increased impurity concentration effects at reduced L_g.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Tanaka M

  Department Of Electronics & Computer Engineering Gifu-university

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Mattausch Hans

  Research Center For Nanodevices And Systems Hiroshima University

• Ueno Hiroki

  Department Of Electrical And Electronic Engineering Chuo University

• NAKAYAMA Noriaki

  Tokyo Institute of Technology

• Mattausch Hans

  Hiroshima University

• Kumashiro Shigetaka

  Semiconductor Technology Academic Research Center

• Kumashiro S

  Ulsi Device Development Division Nec Corporation

• NAKAYAMA Noriaki

  Institute for Chemical Research,Kyoto University

• Nakayama Noriaki

  Semiconductor Technology Academic Research Center

• Nakayama Noriaki

  Graduate School Of Advanced Science Of Matter Hiroshima University

• Mattausch Hans

  Research Institute For Nanodevice And Bio Systems Hiroshima University

• Kawano Hiroaki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)matsushita Comm

• Tanaka M

  Department Of Electrical And Electronic Engineering Akita University

• Navarro Dondee

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ueno H

  Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)matsushita Semi

• Ueno Hiroaki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• TANAKA Masayasu

  Graduate School of Advanced Science of Matter, Hiroshima University

• MIURA-MATTAUSCH Mitiko

  Graduate School of Advanced Science of Matter, Hiroshima University

• HISAMITSU Kazuya

  Graduate School of Advanced Sciences of Matter,Hiroshima University

• YAMAOKA Takatoshi

  Graduate School of Advanced Sciences of Matter,Hiroshima University

• YAMAGUCHI Tetsuya

  Semiconductor Technology Academic Research Center

• YAMASHITA Kyoji

  Semiconductor Technology Academic Research Center

• Miura‐mattausch M

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Nakayama N

  Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University

• Hisamitsu Kazuya

  Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)fujitsu Laborat

• Yamaoka Takatoshi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)yokogawa Denki

• Miura-mattausch Mitiko

  Hiroshima-university

• Kawano H

  Ntt Telecommunication Networks Lab. Musashino‐shi Jpn

• NAVARRO Dondee

  Graduate School of Advanced Sciences of Matter, Hiroshima University

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