High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer
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概要
- 論文の詳細を見る
A time-of-flight experiment is performed to directly measure the properties of high-tangential-electric-field electron transport at the inversion layer in a metal oxide semiconductor device. We have observed that the saturation velocity is about $6.5\times 10^{6}$ cm/s. The structure of the device used for the time-of-flight experiment is not identical to a conventional metal oxide semiconductor field-effect transistor. We found that the measured electron mobility is higher than that for the conventional metal oxide semiconductor field-effect transistor at the same effective normal electric field. Our results further elucidate the properties of electron mobility more than the reported results of Cooper and Nelson's experiment.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-15
著者
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Matsushima Osamu
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ueno Hiroaki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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TANAKA Masayasu
Graduate School of Advanced Science of Matter, Hiroshima University
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Tanaka Masayasu
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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