Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
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概要
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This paper presents an experimentally found device-size-independent universal relationship between the settling time of floating-body silicon-on-insulator (SOI) metal--oxide--semiconductor field-effect transistors (MOSFETs) and the substrate current in body-tied devices. Such a relationship could enable one to characterize dynamic properties of SOI MOSFETs through DC measurements and would be useful for physical compact modeling of history effects.
- 2011-04-25
著者
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Ohyama Katsuroh
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyake Masataka
HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Amakawa Shuhei
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Toda Asato
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Higashiguchi Naoya
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Hori Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Shintaku Yasuhiro
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Amakawa Shuhei
Graduate School of Advanced Sciences of Matter, Hiroshima University
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