Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
We developed a compact model of the short-channel effect in double-gate metal oxide semiconductor field-effect transistors (DG-MOSFETs). The model is implemented in Hiroshima University STARC IGFET Model (HiSIM)-DG, solving the Poisson equation explicitly for considering the potential distribution within the silicon layer. It is proved that calculation results for HiSIM-DG reproduce the subthreshold as well as the saturation characteristics of two-dimensional (2D) device simulation results. It is found from our investigation that the advantage of DG-MOSFETs, that is, suppressing the short-channel effect in the subthreshold region markedly, is diminished under the saturation condition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Ishimura Kenta
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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