1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)

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概要

• 論文の詳細を見る

• A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nm-MOSFETs accurately. Two kinds of measured spectra are observed : 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions.

• 社団法人電子情報通信学会の論文
• 2005-02-01

著者

• NAKAYAMA Noriaki

  Semiconductor Technology Academic Research Center(STARC)

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Mattausch Hans

  Research Center For Nanodevices And Systems Hiroshima University

• Ueno Hiroki

  Department Of Electrical And Electronic Engineering Chuo University

• NAKAYAMA Noriaki

  Tokyo Institute of Technology

• Mattausch Hans

  Hiroshima University

• OHGURO Tatsuya

  Semiconductor Technology Academic Research Center

• Ohguro Tatsuya

  Department Of Physics Faculty Of Science Hokkaido University

• Kumashiro Shigetaka

  Semiconductor Technology Academic Research Center

• Kumashiro S

  Ulsi Device Development Division Nec Corporation

• NAKAYAMA Noriaki

  Institute for Chemical Research,Kyoto University

• Nakayama Noriaki

  Semiconductor Technology Academic Research Center

• Mattausch Hans

  Research Institute For Nanodevice And Bio Systems Hiroshima University

• Ueno H

  Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)matsushita Semi

• Ueno Hiroaki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hosokawa Satoshi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)ricoh Corporati

• YAMAGUCHI Tetsuya

  Semiconductor Technology Academic Research Center

• YAMASHITA Kyoji

  Semiconductor Technology Academic Research Center

• MATTAUSCH Mitiko

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MATSUMOTO Shizunori

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• KITAMURA Toshihiko

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miura‐mattausch M

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Nakayama N

  Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University

• Ohguro Tatsuya

  Semiconductor Company Toshiba Corporation

• Matsumoto S

  Semiconductor Technology Academic Research Center

• Kitamura Toshihiko

  Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)kyocera

• Miura-mattausch Mitiko

  Hiroshima-university

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