A PN Junction-Current Model for Advanced MOSFET Technologies
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概要
- 論文の詳細を見る
A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potential-based MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.
- （社）電子情報通信学会の論文
- 2009-04-01
著者
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SADACHIKA Norio
Hiroshima University
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INOUE Yasuaki
Waseda University
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Miura‐mattausch Mitiko
Hiroshima University
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Miura Mattausch
Hiroshima University
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Inagaki Ryosuke
Graduate School Of Ips Waseda University
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Inagaki Ryosuke
Starc:waseda University
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Inoue Yasuaki
Graduate School Of Ips Waseda University
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SADACHIKA Norio
Advanced Science of Matter, Hiroshima University
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INAGAKI Ryosuke
Waseda University
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Sadachika Norio
Advanced Science Of Matter Hiroshima University
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Miura-mattausch Mitiko
Hiroshima-university
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