A Low-Power Sub-1-V Low-Voltage Reference Using Body Effect(<Special Section>Selected Papers from the 19th Workshop on Circuits and Systems in Karuizawa)
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概要
- 論文の詳細を見る
A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181mV and 1.1μW, respectively. The temperature coefficient of the reference voltage is 33ppm/℃ at temperatures from -40 to 100℃. The supply voltage can be as low as 0.95V in a standard CMOS 0.35μm technology with threshold voltages of about 0.5V and -0.65V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36mV/V (Vdd=0.95-3.3V).
- 社団法人電子情報通信学会の論文
- 2007-04-01
著者
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Huang Wei-lun
Graduate School Of Information Production And Systems Waseda University
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Pan Jun
Graduate School Of Information Production And Systems Waseda University
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INOUE Yasuaki
Graduate School of Information, Production and Systems, Waseda University
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LIANG Zheng
Graduate School of Information, Production and Systems, Waseda University
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HUANG Zhangcai
Graduate School of Information, Production and Systems, Waseda University
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HUANG Weilun
Graduate School of Information, Production and Systems, Waseda University
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Huang Zhangcai
Research Center Of Information Production And Systems Waseda University
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Liang Zheng
Graduate School Of Information Production And Systems Waseda University
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Inoue Yasuaki
Graduate School Of Information Production And Systems Waseda University
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Huang Zhangcai
Graduate School Of Information Production And Systems Waseda University
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Pan Jun
Graduate School Of Agriculture Hokkaido University
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Inoue Yasuaki
Graduate School Of Ips Waseda University
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