Miura‐mattausch Mitiko | Hiroshima University
スポンサーリンク
概要
関連著者
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Miura‐mattausch Mitiko
Hiroshima University
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Miura-mattausch Mitiko
Hiroshima-university
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SADACHIKA Norio
Hiroshima University
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Inagaki Ryosuke
Graduate School Of Ips Waseda University
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Inagaki Ryosuke
Starc:waseda University
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Inoue Yasuaki
Graduate School Of Ips Waseda University
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SADACHIKA Norio
Advanced Science of Matter, Hiroshima University
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Sadachika Norio
Advanced Science Of Matter Hiroshima University
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Inoue Yasuaki
Graduate School Of Information Production And Systems Waseda University
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Miura‐mattausch M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Navarro Dondee
Silvaco Japan Co. Ltd.
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MIURA-MATTAUSCH Mitiko
Advanced Science of Matter, Hiroshima University
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Sadachika Norio
Hiroshima-university
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Feldmann Uwe
Hiroshima Univ. Higashihiroshima‐shi Jpn
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MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
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Mattausch Hans
Hiroshima University
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Feldmann Uwe
Hiroshima University
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MIYAKE Masataka
Hiroshima University
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HORI Daisuke
Hiroshima University
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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SAHARA Yasuyuki
Semiconductor Technology Academic Research Center
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HOSHIDA Teruhiko
Semiconductor Technology Academic Research Center
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TSUKADA Toshiro
Semiconductor Technology Academic Research Center
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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INOUE Yasuaki
Waseda University
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Miura Mattausch
Hiroshima University
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INAGAKI Ryosuke
Waseda University
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Yumisaki Akihiro
Hiroshima-university
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MIMURA Shu
Hiroshima-University
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JOHGUCHI Kou
Hiroshima-University
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KAYA Akihiro
Hiroshima-University
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Tsukada Toshiro
Semiconductor & Integrated Circuits Group Hitachi Lid.
著作論文
- Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
- A Bulk-Current Model for Advanced MOSFET Technologies Without Binning : Substrate Current and Fowler-Nordheim Current
- A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2
- A PN Junction-Current Model for Advanced MOSFET Technologies
- Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100nm SOC Circuit Design