Matsuzawa Kazuya | Semiconductor Technology Academic Research Center
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概要
関連著者
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
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佐野 伸行
筑波大学物理工学系
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SANO Nobuyuki
Institute of Applied Physics, University of Tsukuba
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa K
Toshiba Corp. Yokohama‐shi Jpn
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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佐野 伸行
筑波大 物理工学系
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MUKAI Mikio
Semiconductor Technology Academic Research Center(STARC)
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Mukai Mikio
Health-care Center Kinki Central Hospital
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NAKAYAMA Noriaki
Semiconductor Technology Academic Research Center(STARC)
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NATORI Kenji
Institute of Applied Physics, University of Tsukuba
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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Natori K
Univ. Tsukuba Ibaraki Jpn
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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HOSHIDA Teruhiko
Semiconductor Technology Academic Research Center
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Nakayama Noriaki
Semiconductor Technology Academic Research Center
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Nakayama Noriaki
Fujitsu Laboratories Ltd.
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Nakayama Noriaki
Semiconductor Technology Academic Research Center (starc)
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Nakayama Noriaki
Department Of Advanced Materials Science And Engineering Faculty Of Engineering
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Feldmann Uwe
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Mattausch Hans
Hiroshima University
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SADACHIKA Norio
Hiroshima University
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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Feldmann Uwe
Hiroshima University
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MIYAKE Masataka
Hiroshima University
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HORI Daisuke
Hiroshima University
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SAHARA Yasuyuki
Semiconductor Technology Academic Research Center
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TSUKADA Toshiro
Semiconductor Technology Academic Research Center
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HIROKI Akira
Semiconductor Technology Academic Research Center (STARC)
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Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Miura‐mattausch Mitiko
Hiroshima University
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Miura‐mattausch M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Sadachika Norio
Hiroshima-university
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Miura-mattausch Mitiko
Hiroshima-university
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Tsukada Toshiro
Semiconductor & Integrated Circuits Group Hitachi Lid.
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ma Chenyue
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Yamaguchi Seiichiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Kinoshita Akinari
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Arakawa Takahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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He Jin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Hoshida Teruhiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
著作論文
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect